Masurarea unor parametri electrici ... EMBED Equation.3 EMBED Equation.3 unde s1.6 EMBED Equation.3 EMBED Equation.3 unde l este lungimea de difuzie pentru fiecare plachetaDeterminarea experimentala a variatiei rezistivitatii electrice relative a unui monocristal de Ge cu temperatura 13s.Determinarea latimii benzii interzise pentru un semiconductor din GeRelatia de calculi 1.725 EMBED Equation.3 10-4 ieVsSchema montajului SemiconductorTabele de date si rezultateNr probaTip semicondTip conductieU imVsI imAs imsConcentratia de impuritati1Sigoluri0.5100.7210-3210203Sigoluri0.41 00.5810-341020a EMBED Equation.3 EMBED Equation.3 l EMBED Equation.3 EMBED Equation.3 3.210-3 0.5810-3 aml 2s 21.6 3.2 mm Nr. crt.TemperaturaUIKimVsimAsims12937410.7423137510.7 533337010.743534210.4253732810.28a EMBED Equation.3 2as EMBED Equation.3 23.141.610-3 0.42 ami 1.725 EMBED Equation.3 10-41.725 EMBED Equation.3 10-4i 1.7250.106 0.182 eV4. Observatii Conductia in cristalele de siliciu esteaGHJ6OPvxzaIpaIajhNhNCJEHUaj!JihNUVajhNCJUajh shsCJEHUajiJihsUVajhsCJUjhCJhsCJjrhCJhNCJhCJhs5CJh5 CJhhshArhArhAr56CJaJhs56CJaJaGHIJsa 56PhIaFFaaiA689LMNOŕFyiiehajhCJUmHnHuhCJhNhCJhNCJH ajhNhsCJEHaUajJihsUVhCJHhCJajRhNhNCJEHUaj!JihNUVajh NhNCJEHUajJihNUVhNCJajhNCJUhsCJ-rsa HJLNPaaapphhFgd saaFFHPR HTVtbdrvxI4iiiajhshsCJEHUajAJihsUVajhsCJUhsCJhshCJ hsCJHhsCJjhCJjrhCJhhCJhCJhCJ9PRaIfaaIfaFgdBHV.aIfak dIflvgXIi0aaa4alaaVdxaIfa.aIfakdhIflvgXIi0aaa4alaaa Ifa.gdkdIflvgXIi0aaa4alaaa468DFlnprtviBtdf xojhsCJj rhsCJhsCJhshshsCJhCJhsCJHajhshsCJEHUajzJihsUVajhshs CJEHUajgJihsUVhsCJajhsCJUajhshsCJEHUajQJihsUV26... Download |